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Proceedings Paper

Three-aspherical-mirror system for EUV lithography
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Paper Abstract

In order to investigate industrial applications of synchrotron radiation, Hyogo Prefecture is constructing a synchrotron radiation (SR) ring at the SPring-8 site. It will operate at an electron energy of 1.5 GeV. In September, 1998, the ring will be commissioned when the SPring-8 injector begins feeding electrons into it. We developed a beam line for EUVL under the industrial applications program. In addition, we are developing a three-spherical- mirror system for EUVL. The specifications of the exposure tool target the 0.1-micrometers generation on the SIA road map. This tool consists of illumination optics, a scanning and alignment mechanism, 3-aspherical-mirror optics, and a load- lock chamber for exchanging wafers. The exposure tool is installed in a thermal chamber located at the end of the beamline. Using this system, we plan to develop a 0.1-micrometers process and fabricate MOS devices with feature sizes of 0.1- micrometers and below.

Paper Details

Date Published: 5 June 1998
PDF: 12 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309580
Show Author Affiliations
Hiroo Kinoshita, Himeji Institute of Technology (Japan)
Takeo Watanabe, Himeji Institute of Technology (Japan)
Masahito Niibe, Himeji Institute of Technology (Japan)
Masaaki Ito, Hitachi Central Research Lab. (Japan)
H. Oizumi, Hitachi Central Research Lab. (Japan)
Hiromasa Yamanashi, Hitachi Central Research Lab. (Japan)
Katsuhiko Murakami, Nikon Corp. (Japan)
Tetsuya Oshino, Nikon Corp. (Japan)
Yuriy Ya. Platonov, Osmic Inc. (United States)
Nicola Grupido, Osmic Inc. (United States)

Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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