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Proceedings Paper

Characterization of oxynitride hard mask removal processes for refractory x-ray mask fabrication
Author(s): Cameron J. Brooks; Douglas E. Benoit; Kenneth C. Racette; Denise M. Puisto; Renu Whig; William J. Dauksher; Kevin D. Cummings
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Paper Abstract

Silicon oxynitride removal processes are characterized for incorporation into the refractory x-ray mask fabrication sequence as the hardmask removal step. It is essential that his process not alter final image placement, one of the most critical parameters affecting x-ray mask performance. In this paper, we show that 10:1 buffered HF causes large image placement movement when used on refractory x-ray masks. This is because etching in HF has deleterious effects on TaSi, resulting in highly compressive film stress. Materials analysis indicates the presence of hydrogen in the TaSi films after being exposed to HF, which is most likely affecting the film stress. Alternative processes being investigated include using a more dilute 100:1 buffered HF solution and a CHF3 plasma dry-etch chemistry. Both of these options completely remove the SiON hardmask without causing any significant image placement movement and result in high quality refractory x-ray masks.

Paper Details

Date Published: 5 June 1998
PDF: 6 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309578
Show Author Affiliations
Cameron J. Brooks, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)
Douglas E. Benoit, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)
Kenneth C. Racette, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)
Denise M. Puisto, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)
Renu Whig, Motorola (United States)
William J. Dauksher, Motorola (United States)
Kevin D. Cummings, Motorola (United States)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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