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Proceedings Paper

ACLV control in x-ray lithography
Author(s): Azalia A. Krasnoperova; Robert P. Rippstein; Denise M. Puisto; Janet M. Rocque
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Paper Abstract

In this paper, dimensional control of critical features in proximity x-ray lithography is discussed. CD error components attributed to x-ray mask, proximity exposure and resist process are identified. Analysis of linewidth control data at 180 nm and 150 nm ground rules for synchrotron based x-ray proximity lithography is presented. Data have been collected at IBM Advanced Lithography Facility equipped with x-ray stepper built by SVGL and Helios synchrotron radiation x-ray source.

Paper Details

Date Published: 5 June 1998
PDF: 14 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309568
Show Author Affiliations
Azalia A. Krasnoperova, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)
Robert P. Rippstein, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)
Denise M. Puisto, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)
Janet M. Rocque, Lockheed Martin Federal Systems and IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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