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Proceedings Paper

Laser writing of quantum well intermixed GaInAsP/InP microstructures
Author(s): Jan J. Dubowski; N. Sylvain Charbonneau; Philip J. Poole; Alain P. Roth; Charles Lacelle; Margaret Buchanan
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Paper Abstract

Laser-induced intermixing of quantum well (QW) and barrier material has been studied in GaInAsP/InP laser heterostructures grown by chemical beam epitaxy. Samples were exposed to CW Nd:YAG laser radiation for 7.5 to 300 sec with power densities in the range of 3 to 9 W/mm2. With a laser beam tightly focused on the surface, this approach has the potential to `write' lines of arbitrary shapes of quantum well intermixed material. A 90 nm blue shift of the QW PL peak was demonstrated in the material processed with a triple pass of the 7.5 W/mm2 laser beam. This result has been achieved with a writing speed of 20 micrometers /s. The influence of laser power, dwell time per pass and total irradiation time of the Nd:YAG laser beam on the extent of the blue shift and the optical properties of GaInAsP-based quantum well structures were investigated.

Paper Details

Date Published: 3 June 1998
PDF: 7 pages
Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); doi: 10.1117/12.309526
Show Author Affiliations
Jan J. Dubowski, National Research Council Canada (Canada)
N. Sylvain Charbonneau, National Research Council Canada (Canada)
Philip J. Poole, National Research Council Canada (Canada)
Alain P. Roth, National Research Council Canada (Canada)
Charles Lacelle, National Research Council Canada (Canada)
Margaret Buchanan, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 3274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing III
Jan J. Dubowski; Peter E. Dyer, Editor(s)

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