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Proceedings Paper

Photolithography at wavelengths below 200 nm
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Paper Abstract

Projection photolithography is widely expected to remain the main high-throughput patterning technology of microelectronic circuits in the next few years. As the critical dimensions of these devices shrink to 0.18 micrometers and below, the lithographic wavelength will decrease from 248 to 193 nm, and possible to 157 nm. This paper reviews the challenges posed by reducing the wavelength to below 200 nm, and the current state of the art in the critical areas of optical materials, photoresists, and high-resolution patterning.

Paper Details

Date Published: 3 June 1998
PDF: 7 pages
Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); doi: 10.1117/12.309515
Show Author Affiliations
Mordechai Rothschild, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 3274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing III
Jan J. Dubowski; Peter E. Dyer, Editor(s)

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