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Proceedings Paper

Laser removal of foreign materials from semiconductor wafers
Author(s): Menachem Genut; Boris Livshits; Yoram Uziel; Ofer Tehar-Zahav; Eli Iskevitch; Izhack Barzilay; Shammai Speiser
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Paper Abstract

Removal of foreign materials formed during VLSI/ULSI processing, is one of the challenges of advanced semiconductor technology. As device geometries continue to shrink, microcontaminants such as particles, metallic contaminants, photoresists and other organic residues have an increasing impact on yield. As wafer processing becomes more aggressive and contaminants which are yield limiting become much smaller, traditional cleaning techniques based on wet-chemistry cleaning become less adequate. Only a completely dry cleaning process can overcome all the drawbacks associated with the problematic wet chemistry cleaning. A novel DUV-Excimer laser Dry removal method allows the elimination of these contaminants, in a single step process.

Paper Details

Date Published: 3 June 1998
PDF: 10 pages
Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); doi: 10.1117/12.309497
Show Author Affiliations
Menachem Genut, Oramir Semiconductor Equipment Ltd. (Israel)
Boris Livshits, Oramir Semiconductor Equipment Ltd. (Israel)
Yoram Uziel, Oramir Semiconductor Equipment Ltd. (Israel)
Ofer Tehar-Zahav, Oramir Semiconductor Equipment Ltd. (Israel)
Eli Iskevitch, Oramir Semiconductor Equipment Ltd. (Israel)
Izhack Barzilay, Oramir Semiconductor Equipment Ltd. (Israel)
Shammai Speiser, Technion--Israel Institute of Technology (Israel)


Published in SPIE Proceedings Vol. 3274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing III
Jan J. Dubowski; Peter E. Dyer, Editor(s)

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