Share Email Print
cover

Proceedings Paper

High-speed quantum-well optoelectronic gate based on diffusive conduction recovery
Author(s): Micah B. Yairi; Christopher W. Coldren; David A. B. Miller; James S. Harris Jr.
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A novel high-speed optoelectronic gate, based on electric field screening and ultrafast electrical recovery, is proposed, and demonstrated in principle with ultrathin barrier quantum wells.

Paper Details

Date Published: 22 May 1998
PDF: 4 pages
Proc. SPIE 3490, Optics in Computing '98, (22 May 1998); doi: 10.1117/12.308903
Show Author Affiliations
Micah B. Yairi, Stanford Univ. (United States)
Christopher W. Coldren, Stanford Univ. (United States)
David A. B. Miller, Stanford Univ. (United States)
James S. Harris Jr., Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 3490:
Optics in Computing '98
Pierre H. Chavel; David A. B. Miller; Hugo Thienpont, Editor(s)

© SPIE. Terms of Use
Back to Top