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Proceedings Paper

Nitride film surface properties to reduce nitride residue
Author(s): Fu-Tien Weng; Chih-Hsiung Lee; Kuo-Liang Lu; Yeong-Pey Chyn
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Paper Abstract

Particles and residues occurred during Nitride (OD) layer process have serious effects on the quality for VLSI manufacturing, especially occurred in Nitride deposition and photo developing process play a main killing role of wafer yield and device function. Using KLA-2132 tool, found many Nitride residues caused field oxide missing result in yield loss. After researching, we found Nitride film surface properties have a great relationship with above residues.

Paper Details

Date Published: 8 June 1998
PDF: 11 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308782
Show Author Affiliations
Fu-Tien Weng, Taiwan Semiconductor Manufacturing Co. (China)
Chih-Hsiung Lee, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Kuo-Liang Lu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Yeong-Pey Chyn, Taiwan Semiconductor Manufacturing Co. (Taiwan)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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