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Proceedings Paper

Critical-dimension atomic force microscope (CD-AFM) measurement of masks
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Paper Abstract

Ever-smaller dimensions and more complex circuits demand ever more accurate and precise characterization of mask geometry. Feature must be characterized non-destructively for attributes that include width, undercut, centering, shorting, rounding, optical proximity correction (OPC) and seriff formation. Once characterized, the transfer function of these mask features to wafer features must be determined. The CD-AFM is a uniquely powerful tool for performing these measurements on masks and wafers. It is non-destructive and provides data unobtainable with standard AFMs or electron microscopes. Unlike standard AFMs, it quantitatively profiles lines and trenches in three dimensions. It does not require any of the tedious and time- consuming sample preparation required by cross-sectional TEM or SEM. Another advantage of the CD-AFM is that the samples need not be cleaved and profiles can conveniently be measured anywhere on the wafer and in any order. CD-AFM is used to characterize the mask and techniques for setting the lithographic process are developed. The CD-AFM is calibrated, which includes the characterization of CD-AFM tip-geometry. The effect of tip-geometry on measurement-precision and accuracy are analyzed. Measurement throughput is explored including the benefits of automated data acquisition and analysis.

Paper Details

Date Published: 8 June 1998
PDF: 12 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308778
Show Author Affiliations
Sylvain Muckenhirn, Veeco Process Metrology (United States)
A. Meyyappan, Veeco Process Metrology (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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