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Proceedings Paper

TIS characterization of surface roughness
Author(s): Jeff A. Blau; Robert Pagliaro; Tod F. Schiff
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Paper Abstract

Increasing demand for smoother wafer surfaces necessitates the use of metrology equipment developed for the measurement of roughness on the order of 1 Angstrom RMS over the entire surface of the sample. Much effort directed toward the refinement of using total integrated scatter (TIS) measurements as a texture measurement method has resulted in the design and implementation of a fast, non-contact measurement system able to measure surface roughness to sub-1 Angstroms RMS. As surface quality issues become more pronounced with shrinking topography specifications, manufacturing facilities needing to accurately measure texture and identify aberrations in ultra-smooth surfaces can use this technology to optimize processes and monitor process equipment. Applications to be presented include the effect of pre-clean methods, pre-bake, and bake temperatures on epitaxial deposition, using uniformity in a polysilicon layer to indicate a homogeneous temperature profile in an epitaxial reactor, macro-slip detection, setting initial and bake temperatures to drive-off native oxides, detection of backside depositions occurring during epitaxial growth that can adversely effect the backside flatness of a wafer, vendor out- of box quality control of virgin substrate, using haze measurements to identify the need for corrective or preventative maintenance in an epitaxial reactor, the identification of scratches after chemical-mechanical polish (CMP), and poor wafer handling.

Paper Details

Date Published: 8 June 1998
PDF: 9 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308776
Show Author Affiliations
Jeff A. Blau, Veeco Process Metrology (United States)
Robert Pagliaro, ASM America (United States)
Tod F. Schiff, Schmitt Measurement Systems (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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