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Proceedings Paper

Characterization of a positive chemically amplified photoresist for process control
Author(s): Nickhil H. Jakatdar; Xinhui Niu; Costas J. Spanos; Andrew R. Romano; Joseph J. Bendik; Ronald P. Kovacs; Stephen L. Hill
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Paper Abstract

Chemically Amplified Resists (CARs) are much less observable than their i-line counterparts due to the absence of photoresist actinic absorbency. CARs however, exhibit resist thinning during the Post-Exposure Bake process (PEB). A Design of Experiments (DOE) technique was employed around the exposure and the PEB temperature for a commercial DUV photoresist. A Fourier Transform Infrared (FTIR) technique was used to measure the deprotection of the CARs after the PEB step while standard interferometry techniques were used for exposed area thickness loss measurements after the PEB step. Our analysis indicates that exposed area thickness loss is strongly correlated to the deprotection of the photoresist, so that thickness loss can serve as a reliable deprotection indicator and can hence be possibly used as an observable for control of the photolithography sequence.

Paper Details

Date Published: 8 June 1998
PDF: 8 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308771
Show Author Affiliations
Nickhil H. Jakatdar, Univ. of California/Berkeley (United States)
Xinhui Niu, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)
Andrew R. Romano, National Semiconductor Corp. (United States)
Joseph J. Bendik, National Semiconductor Corp. (United States)
Ronald P. Kovacs, National Semiconductor Corp. (United States)
Stephen L. Hill, Bio-Rad (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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