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Proceedings Paper

Comparison of recent development models in optical lithography simulation
Author(s): Graham G. Arthur; Christine Wallace; Brian Martin
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Paper Abstract

Popular and recent development models used in optical lithography simulation are examined for the accuracy of their fit to practical data and also the ease with which supplied parameters may be fine-tuned to match the results of a particular photo-cell. It is found that some models are better able to describe the dissolution characteristics than others. No one model is found to be preferred in all cases and the final choice is resist dependent. For example, effects such as the 'notch' found in the R(m) curves of some modern high performance photoresists are best described by new models. In addition, a new method for constructing R(m,z) development rate data files is described and parameters extracted for this purpose show how the characteristics vary as a function of depth into the resist film.

Paper Details

Date Published: 8 June 1998
PDF: 12 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308765
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Christine Wallace, GEC Plessey Semiconductors Ltd. (France)
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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