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Proceedings Paper

Examination of several novel approaches for the measurement of two-dimensional roughness of sidewalls of high-aspect-ratio patterns using the atomic force microscope
Author(s): Jeffrey R. Kingsley; Robert J. Plano; Kuo-Jen Chao
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Paper Abstract

Methods of measuring the surface roughness of the sidewalls of high aspect ratio patterns are presented. Cleaving the samples (developed resist and etched silicon) parallel to the long direction of the patterns and rotating the sample 90 degrees fully exposes the sidewall surfaces allowing investigation by either the Scanning Electron Microscope (SEM) or the Atomic Force Microscope (AFM). Another method, simply tipping over the lines in the developed resist samples also allows full access to the resist sidewall. While the SEM can be used to confirm the sidewall surface features, the AFM provides information such as the Root-Mean-Square (RMS) roughness, unobtainable through other methods.

Paper Details

Date Published: 8 June 1998
PDF: 10 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308761
Show Author Affiliations
Jeffrey R. Kingsley, Charles Evans & Associates (United States)
Robert J. Plano, Charles Evans & Associates (United States)
Kuo-Jen Chao, Charles Evans & Associates (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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