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Proceedings Paper

Approach to CD-SEM metrology utilizing the full waveform signal
Author(s): John M. McIntosh; Brittin C. Kane; Jeffery B. Bindell; Catherine B. Vartuli
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Paper Abstract

Critical dimension scanning electron microscope metrology attempts to relate the electron intensity signal of the SEM tool to the actual size and shape of the feature measured. This intensity signal is frequently visualized and manipulated as a profile or waveform. A measurement of the size of a futuro involves the extraction of edge positions from this waveform. Traditional line width metrology ignores much of the effect of the variation of the shape of the feature measured on the waveform to be analyzed. Deducing the shape of a feature from the waveform requires interpretation of the shape of the waveform. Analysis of the CD SEM intensity signal allows one to not only measure the specific width of a feature but it also allows a better estimate as to the actual shape of the feature. Both photo and etch production process drift can be monitored, resulting in improved process and quality control before gross failures in metrology occur.

Paper Details

Date Published: 8 June 1998
PDF: 10 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308759
Show Author Affiliations
John M. McIntosh, Lucent Technologies/Bell Labs. (United States)
Brittin C. Kane, Lucent Technologies/Bell Labs. (United States)
Jeffery B. Bindell, Lucent Technologies/Bell Labs. (United States)
Catherine B. Vartuli, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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