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Proceedings Paper

Advanced surface inspection techniques for SOI wafers
Author(s): Mari Nozoe; Aritoshi Sugimoto; Takahide Ikeda
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Paper Abstract

In this paper, it is described that (1) Various type of SOI wafers have each optimum laser illumination mode, (2) Using this optimum laser illumination, 0.1 - 0.3 micrometer particle detection sensitivity has been achieved. (3) By measuring the noise element of scattered light from SOI surface, failure mode can be determined. The performance of the particle detection for each type of wafer and the result of surface roughness failure is also discussed.

Paper Details

Date Published: 8 June 1998
PDF: 5 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308756
Show Author Affiliations
Mari Nozoe, Hitachi Central Research Lab. (Japan)
Aritoshi Sugimoto, Hitachi, Ltd. (Japan)
Takahide Ikeda, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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