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Proceedings Paper

Photomask-edge-roughness characterization using an atomic force microscope
Author(s): Scott E. Fuller; Michael Young
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Paper Abstract

Photomask edge roughness metrology has historically been performed using optical techniques. However, current optical techniques fail to provide the necessary resolution to meet the requirements for reduced mask edge roughness driven by improved resolution of advanced wafer lithography systems. Atomic force microscopy (AFM) has demonstrated the capability to provide the required physical characterization of printed mask features. At the macroscopic level, the critical dimensions (CDs) of linewidth, sidewall angle, and chrome thickness are measured using an attractive mode, critical dimension scanning algorithm with flared silicon tips. For localized examination of the line edge roughness, the system is operated with sharp conical tips (10 - 30 nm radius) scanned parallel to the profile edge. This new technique provides 10 - 30 nm resolution. In addition, Fourier analysis of the line edge roughness data can be used to identify periodic error signatures in the mask pattern generation.

Paper Details

Date Published: 8 June 1998
PDF: 8 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308752
Show Author Affiliations
Scott E. Fuller, Etec Systems, Inc. (United States)
Michael Young, Veeco Surface Metrology (United States)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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