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Proceedings Paper

Optical thin-film decomposition for DUV positive-tone resist process monitoring
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos; Joseph J. Bendik; Ronald P. Kovacs
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Paper Abstract

New metrology for characterizing chemically amplified resist is needed in order to meet the stringent demands of the DUV lithographic technologies. In this paper, we present a general model for DUV resist optical constants. In this model, we assume that the photoresist is homogeneous and can be decomposed into several 'components' according to their distinct n and k signatures over a broad range of wavelengths. Each component is described by a Kramers-Kronig based dispersion relation. A global optimization with about 18 parameters is solved for the optical thin-film decomposition, using an intelligent simulated annealing algorithm. Various de-noising techniques that can be used on the collected data are also described.

Paper Details

Date Published: 8 June 1998
PDF: 8 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308750
Show Author Affiliations
Xinhui Niu, Univ. of California/Berkeley (United States)
Nickhil H. Jakatdar, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)
Joseph J. Bendik, National Semiconductor Corp. (United States)
Ronald P. Kovacs, National Semiconductor Corp. (United States)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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