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Proceedings Paper

Plasma etch process characterization: an application of atomic force microscopy
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Paper Abstract

With the progress of deep sub-micron semiconductor technology, metrology becomes more critical for plasma etch process development and characterization. Small feature line width, height/depth, and sidewall profile are all important parameters to characterize. The difficulty of accurately and efficiently measure these parameters has become a big challenge to the current metrology tools. Atomic force microscope (AFM) is an attractive alternative metrology tool to meet these challenges in plasma etch process characterization. A Veeco Dektak SXM atomic force microscope is used in this study and several AFM applications in plasma etch process characterization are developed. In shallow trench isolation trench etch process, AFM is used for etch uniformity, etch microloading, and trench profile characterization down to 0.200 micrometer trench geometry. In gate etch process, AFM is used for gate critical dimension (CD) measurement and gate etch profile measurement. The results correspond well with the normal metrology approach. The applications of AFM in local interconnect etch and metal etch are also discussed.

Paper Details

Date Published: 8 June 1998
PDF: 11 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308745
Show Author Affiliations
Wenge Yang, Advanced Micro Devices, Inc. (United States)
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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