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Proceedings Paper

Specific defect density: a new approach for defect reduction
Author(s): Venkat R. Nagaswami; Jos van Gessel; Dries van Wezep
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Paper Abstract

Defect monitoring has become an integral part of semiconductor manufacturing process equivalent to metrology operations such as Critical Dimension measurement and Overlay. The process control on defectivity data has not received the same acceptance as other metrology parameters since the measured defect density can not be easily attributed to a specific equipment. In this work, the problems associated with SPC of defectivity data will be discussed in detail. A parameter known as Specific Defect Density has been defined which can be applied in an automatic mode to shut down an equipment which generates yield limiting defects.

Paper Details

Date Published: 8 June 1998
PDF: 8 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308740
Show Author Affiliations
Venkat R. Nagaswami, Philips Semiconductors (Netherlands)
Jos van Gessel, Philips Semiconductors (Netherlands)
Dries van Wezep, Philips Semiconductors (Netherlands)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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