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Proceedings Paper

Optimal temperature profiles for postexposure bake of photoresist
Author(s): Anders Hansson; Stephen P. Boyd
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Paper Abstract

In this paper it is shown how to compute optimal temperature profiles for post-exposure bake of photo-resist. The profiles are optimal in the sense that the worst case non-uniformity of the dissolution rate in the photo-resist is minimized. This yields uniform development profiles, which make over- development unnecessary. The optimal strategy turns out to be to heat and cool with maximum speed. This means that the only variable that remains to optimize in each specific case is the total time of baking. This is a significant reduction in optimization complexity, and it agrees with common industrial practice.

Paper Details

Date Published: 8 June 1998
PDF: 11 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308736
Show Author Affiliations
Anders Hansson, Stanford Univ. (United States)
Stephen P. Boyd, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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