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Proceedings Paper

Metrology methods for the quantification of edge roughness
Author(s): Carla M. Nelson-Thomas; Susan C. Palmateer; Theodore M. Lyszczarz
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Paper Abstract

As the critical dimension (CD) for semiconductor devices continues to shrink, new thin-layer imaging processes such as bi-layer, Top-Surface Imaging (TSI), Plasma Polymerized Methylsilane (PPMS), and CARL may be required. However, features patterned with these non-traditional processes have inherent high-frequency edge-roughness. If this edge-roughness can not be reduced, it will limit the use of these processes below 0.15 micrometer by reducing process latitude, since the edge-roughness contributes to CD variation and possibly affects device reliability. In order to measure the edge- roughness, a quantitative metrology method needs to be developed. This paper covers the use of a Digital Instruments AFM, a Veeco AFM, and old FE SEM, and a new high resolution SEM for the measurement of the edge-roughness of these patterned features. Quantitative measurements, both in magnitude and spatial frequency are described for each metrology tool. Discussions are made of the parameters that limit the edge-roughness measurement and compared to the parameters that are known to affect CD measurement. Examples of measured edge-roughness are given for a variety of dry developed samples including features processed with an oxide hard mask and TSI. Edge-roughness of chrome features on the reticle, patterned TSI features, and patterned single-layer features are compared to confirm that the higher frequency roughness observed in TSI is not transferred from the reticle.

Paper Details

Date Published: 8 June 1998
PDF: 11 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308735
Show Author Affiliations
Carla M. Nelson-Thomas, SEMATECH (United States)
Susan C. Palmateer, MIT Lincoln Lab. (United States)
Theodore M. Lyszczarz, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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