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Proceedings Paper

Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications
Author(s): Richard A. Allen; Rathindra N. Ghoshtagore; Michael W. Cresswell; Loren W. Linholm; Jeffry J. Sniegowski
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Paper Abstract

The National Institute of Standards and Technology (NIST) is exploring the feasibility of using artifacts fabricated on silicon-on-insulator (SOI) materials to quantify methods divergence, for critical dimension (CD) metrology applications. Test structures, patterned on two types of (110) SOI materials, SIMOX (Separation by IMplantation of OXygen) and BESOI (Bonded-and-Etched-back Silicon-on-Insulator), have been compared. In this paper, we describe results of electrical critical dimension (ECD) measurements and the relative performance of the test structures fabricated on the two SOI materials.

Paper Details

Date Published: 8 June 1998
PDF: 8 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308722
Show Author Affiliations
Richard A. Allen, National Institute of Standards and Technology (United States)
Rathindra N. Ghoshtagore, National Institute of Standards and Technology (United States)
Michael W. Cresswell, National Institute of Standards and Technology (United States)
Loren W. Linholm, National Institute of Standards and Technology (United States)
Jeffry J. Sniegowski, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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