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Proceedings Paper

High-power high-speed single-mode diode lasers for optical intersatellite link applications
Author(s): Benjamin Li; WeiJian Sha; PingHui Sophia Yeh; Radhakrishnan Nagarajan; Richard R. Craig
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Paper Abstract

High power single-mode AlGaAs semiconductor lasers operating between 820 nm and 860 nm (SDL-5400 series diodes) have been successfully qualified for deployment in many free-space inter-satellite communication link programs. Traditionally these high power devices did not have sufficient bandwidth for direct high speed modulation because of large device and package parasitics. We have improved the device parasitics of the SDL-5430 laser diode, i.e. reduced the RC product, from 240 ps to about 40 ps. The initial measurements indicate that this device (SDL-5480) is suitable for high power optical inter-satellite link (OISL) applications at data rates greater than 1 Gbit/s. The preliminary life test indicates that the new device has better a reliability than the previous design.

Paper Details

Date Published: 27 May 1998
PDF: 5 pages
Proc. SPIE 3266, Free-Space Laser Communication Technologies X, (27 May 1998); doi: 10.1117/12.308717
Show Author Affiliations
Benjamin Li, SDL, Inc. (United States)
WeiJian Sha, SDL, Inc. (United States)
PingHui Sophia Yeh, SDL, Inc. (United States)
Radhakrishnan Nagarajan, SDL, Inc. (United States)
Richard R. Craig, SDL, Inc. (United States)


Published in SPIE Proceedings Vol. 3266:
Free-Space Laser Communication Technologies X
G. Stephen Mecherle, Editor(s)

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