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Proceedings Paper

Synthesis of high-quality Si1-yCy and Si1-x-yGexCy epitaxial layers on <100> Si by ion implantation and pulsed excimer laser crystallization
Author(s): Jean-Jacques Grob; Eric Fogarassy; Adriana Grob; Dominique Muller; Bernard Prevot; Roland Stuck; Salome de Unamuno; Pierre Boher; Marc X. Stehle
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Paper Abstract

Si1-yCy and Si1-x-yGexCy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution and substitutional incorporation, strain formation and relaxation, SiC precipitation and C- induced band gap modification are demonstrated to depend strongly on both ion implantation and laser processing conditions. The growing of large area pseudomorphic epitaxial alloys of group IV semiconductor elements, using the high energy beam excimer laser (up to 1 J/cm2 per pulse over 40 cm2) developed by SOPRA for industrial applications, is described.

Paper Details

Date Published: 26 May 1998
PDF: 10 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308655
Show Author Affiliations
Jean-Jacques Grob, Lab. PHASE/CNRS (France)
Eric Fogarassy, Lab. PHASE/CNRS (France)
Adriana Grob, Lab. PHASE/CNRS (France)
Dominique Muller, Lab. PHASE/CNRS (France)
Bernard Prevot, Lab. PHASE/CNRS (France)
Roland Stuck, Lab. PHASE/CNRS (France)
Salome de Unamuno, Lab. PHASE/CNRS (France)
Pierre Boher, SOPRA SA (France)
Marc X. Stehle, SOPRA SA (France)

Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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