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Proceedings Paper

Pulsed laser deposition of ZnSxSe1-x and CdSxSe1-x thin films on quartz: measurements of energy gap, absorption coefficient, and refractive index
Author(s): M. Ambrico; V. Stagno; D. Smaldone; R. Martino; G. Perna; V. Capozzi
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Paper Abstract

ZnSxSe1-x and CdSxSe1-x thin films have been successfully deposited in optimized conditions on quartz by ablating stoichiometric cold pressed targets. From X-ray diffraction analysis the interplanar distance d for cubic ZnSxSe1-x and the c-axis value for hexagonal CdSxSe1-x thin films as a function of Sulfur concentration (x) have been calculated. From room transmittance and reflectance measurements the energy gap modulation, the absorption coefficient and the real part of the refractive index were calculated and compared with those of the corresponding bulk alloys. The analytical dependence of the energy gap and the reticular parameters d and c vs the x-value have been also deduced.

Paper Details

Date Published: 26 May 1998
PDF: 8 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308654
Show Author Affiliations
M. Ambrico, Istituto Materiali Speciali/CNR (Italy)
V. Stagno, Istituto Materiali Speciali/CNR (Italy)
D. Smaldone, Istituto Materiali Speciali/CNR (Italy)
R. Martino, Istituto Materiali Speciali/CNR (Italy)
G. Perna, Univ. degli Studi di Bari and Istituto Nazionale di Fisica della Materia (Italy)
V. Capozzi, Univ. degli Studi di Bari and Istituto Nazionale di Fisica della Materia (Italy)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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