Share Email Print
cover

Proceedings Paper

Laser ablation and deposition of CdSe and CdS on GaAs substrate
Author(s): G. Perna; V. Capozzi; M. Ambrico; D. Smaldone; R. Martino
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The photoluminescence properties of CdSe and CdS films deposited on GaAs substrate by means of laser ablation technique are studied as a function of temperature. The free excitonic recombination is used to determine the energy gap position in the entire temperature range from 10 to 300 K. Semiempirical models well fit the experimental data, so allowing to determine material dependent parameters, related to exciton-phonon and exciton-impurity scattering.

Paper Details

Date Published: 26 May 1998
PDF: 6 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308650
Show Author Affiliations
G. Perna, Univ. degli Studi di Bari and Istituto Nazionale di Fisica della Materia (Italy)
V. Capozzi, Univ. degli Studi di Bari and Istituto Nazionale di Fisica della Materia (Italy)
M. Ambrico, Istituto Materiali Speciali/CNR (Italy)
D. Smaldone, Istituto Materiali Speciali/CNR (Italy)
R. Martino, Istituto Materiali Speciali/CNR (Italy)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing

© SPIE. Terms of Use
Back to Top