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Proceedings Paper

Visible photoluminescence from F-doped nanocrystallites of silicon films prepared by laser chemical vapor deposition
Author(s): A. E. Dar'yushkin; S. B. Korovin; Vladimir I. Pustovoy
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Paper Abstract

We have observed visible photoluminescence (PL) from F-doped silicon nanocrystallites films prepared in the chemical vapor deposition system. The PL spectra are in the range of 500 - 800 nm with the luminescence peak localized near 540 nm. High energy shift of the luminescence peak is discussed in terms of material structural characteristics, and a tentative explanation of light emission mechanism is proposed.

Paper Details

Date Published: 26 May 1998
PDF: 5 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308647
Show Author Affiliations
A. E. Dar'yushkin, General Physics Institute (Russia)
S. B. Korovin, General Physics Institute (Russia)
Vladimir I. Pustovoy, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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