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Proceedings Paper

Surface defect induced by strong electric field probed by soft x-ray laser interferometry
Author(s): F. Albert; Philippe Zeitoun; Denis Joyeux; Mustapha Boussoukaya; Antoine Carillon; S. Hubert; Pierre Jaegle; Gerard Jamelot; Annie Klisnick; Daniel Phalippou; David Ros; Stephane Sebban; Anne Zeitoun-Fakiris
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Paper Abstract

We use x-ray laser interferometry to probe defects induced by a strong electric field on niobium surface. Niobium has been chosen on account of its frequent use in superconductive cavities of particle accelerators. The x-ray laser emits bright, 50 ps-duration pulses at (lambda) equals 21.2 nm. The beam is reflected on the niobium surface under grazing incidence. The interferometer is of the wave-front division type. Interferograms are single shot recorded, which enables to probe `instantaneous' defect morphology. We observed appearance and evolution of defects between 14 MV/m and 35 MV/m. The vertical set amplitude is of 10 - 20 nm. The defect structure has been observed to shift by 500 micrometers along the metal surface under a constant 35 MV/m electric field, during the 20 minutes time interval between two laser shots.

Paper Details

Date Published: 26 May 1998
PDF: 8 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308642
Show Author Affiliations
F. Albert, Univ. de Paris-Sud (France)
Philippe Zeitoun, Univ. de Paris-Sud (France)
Denis Joyeux, Univ. de Paris-Sud (France)
Mustapha Boussoukaya, Univ. de Paris-Sud and CEA Saclay (France)
Antoine Carillon, Univ. de Paris-Sud (France)
S. Hubert, Univ. de Paris-Sud (France)
Pierre Jaegle, Univ. de Paris-Sud (France)
Gerard Jamelot, Univ. de Paris-Sud (France)
Annie Klisnick, Univ. de Paris-Sud (France)
Daniel Phalippou, Univ. de Paris-Sud (France)
David Ros, Univ. de Paris-Sud (France)
Stephane Sebban, Univ. de Paris-Sud (France)
Anne Zeitoun-Fakiris, CEA Saclay (France)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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