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Proceedings Paper

Growth of epitaxial ZnSe and Cd1-xZnxTe films on (100)GaAs by laser ablation
Author(s): Jean Louis Deiss; Jean-Luc Loison; Michele Robino
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Paper Abstract

Epilayers of ZnSe and Cd1-xZnxTe have been deposited on (100)GaAs substrates by a pulsed laser deposition technique. The ZnSe target was a polycrystalline block of high purity and the different Cd1-xZnxTe targets were either polycrystalline or cold-pressed samples obtained by mixing the binary CdTe and ZnTe powders. The surface morphology, the crystalline and optical quality of these epilayers are investigated and compared to MOCVD- grown layers.

Paper Details

Date Published: 26 May 1998
PDF: 6 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308639
Show Author Affiliations
Jean Louis Deiss, IPCMS/Univ. Louis Pasteur (France)
Jean-Luc Loison, IPCMS/Univ. Louis Pasteur (France)
Michele Robino, IPCMS/Univ. Louis Pasteur (France)

Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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