Share Email Print
cover

Proceedings Paper

Laser spectroscopy of silicon nanostructures
Author(s): Yoshihiko Kanemitsu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We discuss the mechanism of efficient photoluminescence (PL) from Si nanocrystals. Luminescence properties of SiO2- capped Si nanocrystals are different from those of H- passivated Si nanocrystals. The size-dependence of PL properties and resonantly excited PL spectra of SiO2- capped Si nanocrystals indicate that excitons are localized at the interface between c-Si and SiO2 surface layer. The TO-phonon related structure in resonantly excited luminescence is clearly observed in H-passivated Si nanocrystals. H-passivated Si nanocrystals show their crystalline nature, while the oxidized Si nanocrystals show their disorder nature. The luminescence properties of Si nanocrystals are discussed.

Paper Details

Date Published: 26 May 1998
PDF: 10 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308636
Show Author Affiliations
Yoshihiko Kanemitsu, Nara Institute of Science and Technology (Japan)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

© SPIE. Terms of Use
Back to Top