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Proceedings Paper

Laser spectroscopy of silicon nanostructures
Author(s): Yoshihiko Kanemitsu
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Paper Abstract

We discuss the mechanism of efficient photoluminescence (PL) from Si nanocrystals. Luminescence properties of SiO2- capped Si nanocrystals are different from those of H- passivated Si nanocrystals. The size-dependence of PL properties and resonantly excited PL spectra of SiO2- capped Si nanocrystals indicate that excitons are localized at the interface between c-Si and SiO2 surface layer. The TO-phonon related structure in resonantly excited luminescence is clearly observed in H-passivated Si nanocrystals. H-passivated Si nanocrystals show their crystalline nature, while the oxidized Si nanocrystals show their disorder nature. The luminescence properties of Si nanocrystals are discussed.

Paper Details

Date Published: 26 May 1998
PDF: 10 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308636
Show Author Affiliations
Yoshihiko Kanemitsu, Nara Institute of Science and Technology (Japan)

Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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