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Proceedings Paper

Raman spectroscopy on BaTiO3 ferroelectric thin films deposited by a hybrid DC-field-enhanced PLD process
Author(s): Thomas Klotzbuecher; M. Mergens; Andreas Husmann; Jens Gottmann; Ernst-Wolfgang Kreutz
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Paper Abstract

Raman spectroscopy is employed for structural characterization of BaTiO3 ferroelectric thin films, deposited by a hybrid DC-field enhanced pulsed laser deposition process. Pulsed excimer laser radiation (KrF, (lambda) equals 248 nm, (tau) equals 25 ns) is used for material removal from a sintered BaTiO3-target in an O2 processing gas atmosphere (pressure p(O2) approximately equals 1 * 10-1 mbar) with subsequent deposition on a substrate. Additional energy is supplied to the laser- induced plasma via a system of two concentric ring electrodes lying on different electric potentials (difference (Delta) V up to several hundred V), leading to further activation of the plasma and ignition of a DC- discharge in the processing gas atmosphere. Micro-Raman spectroscopy is performed with Ar+ laser radiation ((lambda) equals 488 nm), using a microscope unit to achieve a high spatial resolution in the range of 1 micrometers . The Raman spectra of the BaTiO2 films show peaks typical for the tetragonal/cubic Perovskite structure. Polarization- dependent measurements reveal a mean c-axis orientation normal to the substrate surface, regardless whether a DC- field is applied or not. Using low DC-bias voltages ((Delta) V equals 50 V) allows lowering the substrate temperature without affecting the crystal quality of the films, as determined from the full width at half maximum of the Raman peaks, which is a measure for the crystal quality. High DC-bias voltages ((Delta) V equals 700 V), however, lead to amorphous films. The dielectric constant of the BaTiO3 films is strongly correlated to the crystal quality.

Paper Details

Date Published: 26 May 1998
PDF: 8 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308635
Show Author Affiliations
Thomas Klotzbuecher, Technische Univ. Aachen (Germany)
M. Mergens, Technische Univ. Aachen (Germany)
Andreas Husmann, Technische Univ. Aachen (Germany)
Jens Gottmann, Technische Univ. Aachen (Germany)
Ernst-Wolfgang Kreutz, Technische Univ. Aachen (Germany)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing

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