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Proceedings Paper

Laser-stimulated modification of the structure of silicon layers produced with the LCVD method
Author(s): A. E. Dar'yushkin; S. B. Korovin; Vladimir I. Pustovoy
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Paper Abstract

Based on the measured spectra of Raman scattering, we obtained the data concerning the modification of the microstructure of silicon film synthesized with the use of the LCVD (laser chemical vapor deposition) method on amorphous glass substrate. Appearance of a polycrystalline phase of silicon was observed when the initial amorphous film was irradiated with high-power light pulses of a CO2 laser. Time resolved reflection spectra were measured for irradiating silicon films in situ. Was observed the polycrystalline film formation, moreover, films melting was not founded.

Paper Details

Date Published: 26 May 1998
PDF: 4 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308624
Show Author Affiliations
A. E. Dar'yushkin, General Physics Institute (Russia)
S. B. Korovin, General Physics Institute (Russia)
Vladimir I. Pustovoy, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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