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Proceedings Paper

CW-laser-induced spherulitic recrystallization in Sb-Se thin layer system
Author(s): N. Starbov; V. Mankov; K. Starbova; Konstantin Kolev; Alain Jadin; Lucien Diego Laude
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Paper Abstract

Thin layers of polycrystalline antimony and amorphous selenium are successively deposited onto a glass substrate. Under specific CW Ar+ laser irradiation conditions in these Sb/Se bilayered films, optical microscopy evidence for a spherulytic crystal growth is obtained. Phase forming is characterized by low angle X-ray diffraction, reflection high energy electron diffraction, energy dispersive X-ray analyses, and Auger spectroscopy. It is shown that, though depending on the laser irradiation conditions, the final spherulytic growth in the irradiated Sb-Se films stems from the Sb-innermost layer crystallization process. Spectacular trans-crystallization takes place through the film during laser treatment of the bilayer. An attempts at modeling this CW-laser induced recrystallization is proposed.

Paper Details

Date Published: 26 May 1998
PDF: 6 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308618
Show Author Affiliations
N. Starbov, Central Lab. of Photoprocesses (Bulgaria)
V. Mankov, Central Lab. of Photoprocesses (Bulgaria)
K. Starbova, Central Lab. of Photoprocesses (Belgium)
Konstantin Kolev, Univ. de Mons-Hainaut (Belgium)
Alain Jadin, Univ. de Mons-Hainaut (Belgium)
Lucien Diego Laude, Univ. de Mons-Hainaut (Belgium)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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