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Proceedings Paper

Modeling and Monte Carlo simulation of nucleation and growth of UV/low-temperature-induced nanostructures
Author(s): Jean Flicstein; S. Pata; L. S. How Kee Chun; Jean Francois Palmier; J. L. Courant
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Paper Abstract

A model for ultraviolet induced chemical vapor deposition (UV CVD) for a-SiN:H is described. In the simulation of UV CVD process, activate charged centers creation, species incorporation, surface diffusion, and desorption are considered as elementary steps for the photonucleation and photodeposition mechanisms. The process is characterized by two surface sticking coefficients. Surface diffusion of species is modeled with a gaussian distribution. A real time Monte Carlo method is used to determine photonucleation and photodeposition rates in nanostructures. Comparison of experimental versus simulation results for a-SiN:H is shown to predict the morphology temporal evolution under operating conditions down to atomistic resolution.

Paper Details

Date Published: 26 May 1998
PDF: 8 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308611
Show Author Affiliations
Jean Flicstein, France Telecom (France)
S. Pata, France Telecom (France)
L. S. How Kee Chun, France Telecom (France)
Jean Francois Palmier, France Telecom (France)
J. L. Courant, France Telecom (France)

Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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