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Proceedings Paper

Laser irradiation of GaAs-GaAlAs multiple-quantum-well structure
Author(s): L. Vivet; Bernard Dubreuil; Titaina Legrand; M. Schneider; C. Vieu
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Paper Abstract

We have studied the effects produced by the laser irradiation with 355 nm photons on a heterostructure made of three independent GaAs/Ga0.67Al0.33As quantum wells. By comparing the luminescence of the three quantum wells before and after the laser irradiation for different durations and fluence values one could determine if the structure of each quantum well has been altered or not. Then we achieved complementary observations of the irradiated multi-quantum wells structures, using both scanning and transmission electron microscopy. We came to the conclusion that the alteration of the multi-quantum wells structure results from two main consequences of the sample pulsed laser heating: the formation of an altered layer which accompanies the pulsed laser sputtering process and the thermal diffusion process.

Paper Details

Date Published: 26 May 1998
PDF: 7 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308605
Show Author Affiliations
L. Vivet, Univ. d'Orleans (France)
Bernard Dubreuil, Univ. d'Orleans (France)
Titaina Legrand, Univ. d'Orleans (France)
M. Schneider, L2M/CNRS (France)
C. Vieu, L2M/CNRS (France)

Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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