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Proceedings Paper

Deposition of GaN thin films by laser ablation of liquid Ga target in nitrogen-reactive atmosphere
Author(s): Maria Dinescu; P. Verardi; L. Vivet; Chantal Boulmer-Leborgne; Catrinel A. Stanciu; Raluca Dinu; C. Gerardi; L. Mirenghi
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Paper Abstract

Crystalline GaN thin films have been deposited by laser ablation of liquid Ga target in nitrogen reactive atmosphere. A Nd-YAG laser (l equals 1.06 mm, tFWHM equals 10 ns) able to deliver an energy of 0.35 J/pulse was used as laser source. The nitrogen pressure was varied in the range of 10-2 - 10-1 mbar. As substrates sapphire plates, heated below 300 degree(s)C, were used. The characteristics of the deposited films were evidenced by different techniques as XPS, SIMS, X-ray diffraction, optical absorption spectroscopy. The Nls region of the XPS spectrum contains as main peak the one centered at 397.3 eV and corresponding to Ga-N bond. From the distance between the photoelectron Ga 3d peak and the Auger Ga LMM peak, the calculated Auger parameter of 1083.9 eV corresponds to the one reported in literature for GaN compound (1084.05 eV). SIMS profiles corresponding to N and Ga in depth- distribution carried out the presence of layers of the order of 130 - 150 nm, with uniform distribution of Ga and N inside the layer. Both techniques evidenced an oxygen contamination below 5%. XRD recorded spectra show the presence of a strong peak assigned to (002) GaN crystalline orientation. Optical absorption spectroscopy studies in the UV and visible range evidenced a high transparency for the deposited films.

Paper Details

Date Published: 26 May 1998
PDF: 5 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308602
Show Author Affiliations
Maria Dinescu, National Institute for Laser, Plasma and Radiation Physics (Romania)
P. Verardi, Istituto di Acustica/CNR (Italy)
L. Vivet, Univ. d'Orleans (France)
Chantal Boulmer-Leborgne, Univ. d'Orleans (France)
Catrinel A. Stanciu, National Institute for Laser, Plasma and Radiation Physics (Romania)
Raluca Dinu, National Institute for Laser, Plasma and Radiation Physics (Romania)
C. Gerardi, PASTIS CNRSM (Italy)
L. Mirenghi, PASTIS CNRSM (Italy)


Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing

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