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Proceedings Paper

Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy
Author(s): Dror Sarid; Xiaowei Yao; Richard K. Workman; Charles A. Peterson; Mahmoud Fallahi
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Paper Abstract

The electronic structure at the interface of GaAs/AlAs multilayers grown by molecular beam epitaxy is investigated on the (110) surface using scanning tunneling microscopy. The valence band bending, which is produced by an interface dipole layer, is observed from cross-sectional profiles exhibiting spike structures. It is found that the transition region of the AlAs/GaAs interface (3.0 - 4.0 nm) is smaller than that of the GaAs/AlAs interface (4.0 - 5.0 nm). Similar spike structures showing a transition region of 3.5 - 4.5 nm are also observed at the GaAs/Al0.6Ga0.4As interface.

Paper Details

Date Published: 4 May 1998
PDF: 8 pages
Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); doi: 10.1117/12.307615
Show Author Affiliations
Dror Sarid, Optical Sciences Ctr./Univ. of Arizona (United States)
Xiaowei Yao, Optical Sciences Ctr./Univ. of Arizona (United States)
Richard K. Workman, Optical Sciences Ctr./Univ. of Arizona (United States)
Charles A. Peterson, Optical Sciences Ctr./Univ. of Arizona (United States)
Mahmoud Fallahi, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 3285:
Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III
Kurt J. Linden; Mahmoud Fallahi; Kurt J. Linden; S. C. Wang, Editor(s)

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