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Proceedings Paper

High-speed semiconductor lasers
Author(s): Niloy K. Dutta
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Paper Abstract

The fabrication and performance characteristics of high speed semiconductor lasers are described in this paper. These include InGaAsP/InP lasers emitting near 1.55 micrometer, InGaAs/GaAs lasers emitting near 1 micrometer and integrated electroabsorption modulated lasers emitting near 1.55 micrometer.

Paper Details

Date Published: 4 May 1998
PDF: 11 pages
Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); doi: 10.1117/12.307614
Show Author Affiliations
Niloy K. Dutta, Univ. of Connecticut (United States)


Published in SPIE Proceedings Vol. 3285:
Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III
Kurt J. Linden; Mahmoud Fallahi; Kurt J. Linden; S. C. Wang, Editor(s)

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