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Proceedings Paper

Modeling the effect of heatsink performance on high-peak-power laser-diode-bar pump sources for solid state lasers
Author(s): Eric C. Honea; Jay A. Skidmore; Barry L. Freitas; Everett J. Utterback; Mark A. Emanuel
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Paper Abstract

We derive approximate expressions for transient output power and wavelength chirp of high-peak-power laser-diode bars assuming one-dimensional heat flow and linear temperature dependences for chirp and efficiency. The model is derived for pulse durations, 10 less than (tau) less than 1000 microseconds, typically used for diode-pumped solid-state lasers and is in good agreement with experimental data for Si heatsink mounted 940 nm laser-diode bars operating at 100 W/cm. The analytic expressions are more flexible and easily used than the results of operating point dependent numerical modeling. In addition, the analytic expressions used here can be integrated to describe the energy per unit wavelength for a given pulse duration, initial emission bandwidth and heatsink material. We find that the figure-of-merit for a heatsink material in this application is ((rho) CpK)1/2 where (rho) Cp is the volumetric heat capacity and K is the thermal conductivity. As an example of the utility of the derived expressions, we determine an effective absorption coefficient as a function of pump pulse duration for a diode-pumped solid-state laser utilizing Yb:Sr5(PO4)3F (Yb:S-FAP) as the gain medium.

Paper Details

Date Published: 4 May 1998
PDF: 12 pages
Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); doi: 10.1117/12.307605
Show Author Affiliations
Eric C. Honea, Lawrence Livermore National Lab. (United States)
Jay A. Skidmore, Lawrence Livermore National Lab. (United States)
Barry L. Freitas, Lawrence Livermore National Lab. (United States)
Everett J. Utterback, Lawrence Livermore National Lab. (United States)
Mark A. Emanuel, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 3285:
Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III
Kurt J. Linden; Mahmoud Fallahi; Kurt J. Linden; S. C. Wang, Editor(s)

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