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Proceedings Paper

Flip-chip-joined 8x8 array of bottom-emitting 850-nm light-emitting diodes for interconnect applications
Author(s): Paul L. Heremans; Patrick Merken; Jan Genoe; Reiner Windisch; Chris A. Van Hoof; Gustaaf Borghs
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Paper Abstract

We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

Paper Details

Date Published: 5 May 1998
PDF: 6 pages
Proc. SPIE 3288, Optoelectronic Interconnects V, (5 May 1998); doi: 10.1117/12.307579
Show Author Affiliations
Paul L. Heremans, IMEC (Belgium)
Patrick Merken, IMEC (Belgium)
Jan Genoe, Vrije Univ./Brussel (Belgium)
Reiner Windisch, IMEC (Germany)
Chris A. Van Hoof, IMEC (Belgium)
Gustaaf Borghs, IMEC (Belgium)

Published in SPIE Proceedings Vol. 3288:
Optoelectronic Interconnects V
Ray T. Chen; Julian P. G. Bristow, Editor(s)

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