Share Email Print

Proceedings Paper

Ultrafast carrier dynamics near a Si surface: a reflective transient grating study
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Reflective transient grating experiments were conducted using two different experimental configurations to study carrier dynamics. Using an 800 nm pump and 400 nm probe, a signal attributed to bleaching was observed, and the carrier energy relaxation time was measured to be approximately 600 fs. Experiments were also conducted with a 400 nm pump and 800 nm pump. For this configuration, the observed TG signal decay was attributed to carrier diffusion and recombination.

Paper Details

Date Published: 30 April 1998
PDF: 10 pages
Proc. SPIE 3272, Laser Techniques for Surface Science III, (30 April 1998); doi: 10.1117/12.307145
Show Author Affiliations
Theodore A. Sjodin, Univ. of Pennsylvania (United States)
Hai-Lung Dai, Univ. of Pennsylvania (United States)
Hrvoje Petek, Hitachi Ltd. (Japan)

Published in SPIE Proceedings Vol. 3272:
Laser Techniques for Surface Science III
Hai-Lung Dai; Hans-Joachim Freund, Editor(s)

© SPIE. Terms of Use
Back to Top