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Proceedings Paper

Depth profiling of polishing-induced contamination on fused silica surfaces
Author(s): Mark R. Kozlowski; Jeff Carr; Ian D. Hutcheon; Richard A. Torres; Lynn Matthew Sheehan; David W. Camp; Ming Yan
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Paper Abstract

Laser-induced damage on optical surfaces is often associated with absorbing contaminants introduced by the polishing process. This is particularly the case for UV optics. In the present study, secondary ion mass spectroscopy (SIMS) was used to measure depth profiles of finishing-process contamination on fused silica surfaces. Contaminating detected include the major polishing compound components, Al present largely because of the use of Al2O3 in the final cleaning process, and other metals incorporated during the polishing step or earlier grinding steps. Depth profile data typically showed an exponential decay of contaminant concentration to a depth of 100-200 nm. This depth is consistent with a polishing redeposition layers formed during the chemo-mechanical polishing of fused silica. Peak contaminant levels are typically in the 10-10 pm range, except for Al which often exceeds 1000 ppm.

Paper Details

Date Published: 20 April 1998
PDF: 11 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.307031
Show Author Affiliations
Mark R. Kozlowski, Lawrence Livermore National Lab. (United States)
Jeff Carr, Lawrence Livermore National Lab. (United States)
Ian D. Hutcheon, Lawrence Livermore National Lab. (United States)
Richard A. Torres, Lawrence Livermore National Lab. (United States)
Lynn Matthew Sheehan, Lawrence Livermore National Lab. (United States)
David W. Camp, Lawrence Livermore National Lab. (United States)
Ming Yan, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

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