Share Email Print
cover

Proceedings Paper

Reliability and degradation characteristics of semiconductor AlGaAs-based diode lasers operating between ~ 0.81 and 1.0 mm
Author(s): Stephen O'Brien; Erik P. Zucker; Benjamin Li; Hanmin Zhao
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High power diode lasers are important for a variety of applications including diode-pumped (DP) solid state lasers, DP fiber lasers/amplifiers and a variety of printing and medical applications. Recently, there have been significant advances in the maximum cw powers achieved from both multimode and singlemode lasers in both AlGaAs-based and InGaAsP- based materials. The highest powers from broad area lasers have been achieved with high quality AlGaAs-based materials. For example, cw powers of 11.3 and 16.5 W have been demonstrated at 870 nm from 100 and 200 micrometers wide apertures, respectively. These power levels correspond to a facet loading of 80-110 mW/micrometers and facet power densities of 27 MW/cm2 which are approximately 2-fold higher than previously reported results. In this paper we report on the performance, reliability and degradation characteristics of AlGaAs- based lasers.

Paper Details

Date Published: 20 April 1998
PDF: 2 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.307024
Show Author Affiliations
Stephen O'Brien, SDL, Inc. (United States)
Erik P. Zucker, SDL, Inc. (United States)
Benjamin Li, SDL, Inc. (United States)
Hanmin Zhao, SDL, Inc. (United States)


Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

© SPIE. Terms of Use
Back to Top