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Proceedings Paper

Pulsed-laser-induced damage in semiconductors Ge, ZnS, and ZnSe at 10.6um
Author(s): Sebastian Lefranc; Eugene M. Kudriavtsev; Michel L. Autric
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Paper Abstract

Laser irradiation induced damage to several materials of interest for use as 10.6 micrometers laser system windows is investigated in this paper. The irradiation source in these single shot experiments was a pulsed TEA CO2 laser. Damage initiation in semiconductors has been studied during the interaction by measuring the variation of the transmitted intensity of a He- Ne and a CO2 cw lasers through the samples. Results show that damages appear at the beginning of the laser-matter interaction process on both surfaces and in the bulk of the materials. The damaged materials have been characterized for various incident fluences by means of optical microscopy and scanning electron microscopy in terms of topography and morphology. The modified surface chemical analysis and the structural analysis have been carried out using energy dispersive x-ray and Raman spectroscopy.

Paper Details

Date Published: 20 April 1998
PDF: 12 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.307013
Show Author Affiliations
Sebastian Lefranc, Institute for Research on Non-Equilibrium Phenomena (France)
Eugene M. Kudriavtsev, P. N. Lebedev Physical Institute (Russia)
Michel L. Autric, Institute for Research on Non-Equilibrium Phenomena (France)


Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

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