Share Email Print

Proceedings Paper

Aging properties of AlGaAs/GaAs high-power diode lasers
Author(s): Franz X. Daiminger; Friedhelm Dorsch; Stefan Heinemann
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

AlGaAs/GaAs high power diode lasers with a nominal output power of 15W were aged at different conditions. At a heatsink temperature of 25 degrees C aging at constant current (CC) and constant power (CP) mode is compared for aging times of 6000 hours. We derived an end-of-life criteria that results in the same lifetime for CC and CP operation assuming identical degradation mechanisms in both cases. The degradation observed differs only significantly beyond 3000-4000 hours of aging with increasing degradation for CP operation. In constant current mode the heatsink temperature is increased resulting in a junction temperature of about 80 degrees C. Assuming an Arrhenius relation the activation energy is estimated. It turns out that different activation energies can be derived either by taking the degradation of the output power at the elevated temperature or at the reference temperature respectively.

Paper Details

Date Published: 20 April 1998
PDF: 9 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.306991
Show Author Affiliations
Franz X. Daiminger, JENOPTIK Laserdiode GmbH (Germany)
Friedhelm Dorsch, JENOPTIK Laserdiode GmbH (Germany)
Stefan Heinemann, JENOPTIK Laserdiode GmbH (Germany)

Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

© SPIE. Terms of Use
Back to Top