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Proceedings Paper

Reliability of Czochralski-grown B-BaB2O4 (BBO) devices
Author(s): Nobuhiko Umezu; Tatsuo Fukui; Tsutomu Okamoto; Hiroyuki Wada; Koichi Tatsuki; Kenji Kondo; Shigeo R. Kubota
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Paper Abstract

We report the first operation of more than 1000 hours of continuous wave (CW) 100-mW output at 266 nm which was frequency-quadrupled from a Nd:YAG or a Nd:YVO4 laser. We used a Czochralski (Cz)-grown (beta) -BaB2O4 (BBO) crystal device to double a 532-nm wave in an external ring cavity. The round trip cavity loss increasing rate was 7.6 X 10-5 percent/hour at a 266-nm power density of 270 W/cm2. The UV range optical transmission loss of the Cz-grown crystal was evaluated. The optical loss of the Cz-grown crystal for e-ray at 266 nm was improved to 2 percent/cm, which was half of the crystal grown by the top seeded solution growth (TSSG) method. The degradation rate, (delta) p equals (dP4w(t)/dt)/P4w(0), was also evaluated in 30 MW/cm2 of 266-nm generation from a Q-switched Nd:YAG laser. The (delta) p of Cz-crystal was typically 0.1 percent/hour, which was one order of magnitude lower than that of the TSSG- crystals. The fabrication process was also improved. Our system with the crystal device can be put to practical use in the areas of photolithography, material processing and ultra high-density optical disk mastering.

Paper Details

Date Published: 20 April 1998
PDF: 6 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.306988
Show Author Affiliations
Nobuhiko Umezu, Sony Corp. (Japan)
Tatsuo Fukui, Sony Corp. (Japan)
Tsutomu Okamoto, Sony Corp. (Japan)
Hiroyuki Wada, Sony Corp. (Japan)
Koichi Tatsuki, Sony Corp. (Japan)
Kenji Kondo, Sony Corp. (Japan)
Shigeo R. Kubota, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

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