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Proceedings Paper

Localized laser damage test facility at LOSCM: real-time optical observation and quantitative AFM study
Author(s): Jean-Yves Natoli; Patricia Volto; Matthieu Pommies; Gerard Albrand; Claude Amra
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Paper Abstract

Laser damage studies were recently introduced at LOSCM. We first describe our experimental set-up and its performances. The device is equipped with a 7 ns Nd : Y AG pulsed laser. Surface modifications due to laser irradiation are observed in real time through a Nomarski microscope placed behind the sample along the optical axis. The beam is aligned with a He-Ne laser and focused in a spot of 25 μmin diameter, which permits a localized study and the determination of intrinsic and extrinsic damage thresholds. The LIDT is determined by the real time Nomarski observation. To go further into the analysis of laser impact we use an Atomic Force Microscope with a micrometric repositioning system that permits a quantitative study. We detail the first results concerning LIDT and morphology of several materials produced by electron beam deposition at LOSCM (Zns, Na~IF6, Si02, Ta20 5, Hf02 and multidielectric mirrors). The whole characterization is performed in strong correlation with deposition parameters and cleanliness control, which allow us to draw a set of preliminary conclusions.

Paper Details

Date Published: 20 April 1998
PDF: 10 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.306969
Show Author Affiliations
Jean-Yves Natoli, Ecole Nationale Superieure de Physique de Marseille (France)
Patricia Volto, Ecole Nationale Superieure de Physique de Marseille (France)
Matthieu Pommies, Ecole Nationale Superieure de Physique de Marseille (France)
Gerard Albrand, Ecole Nationale Superieure de Physique de Marseille (France)
Claude Amra, Ecole Nationale Superieure de Physique de Marseille (France)


Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

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