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Proceedings Paper

Optical and photoelectric- and gas-sensitive properties of porous silicon
Author(s): Valentin A. Smyntyna; Yurij A. Vashpanov
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Paper Abstract

The photoelectronic properties of samples of porous silicon received by method of anodic electrochemical etching of monocrystalline silicon in electrolytes on the base of hydrofluoric acid are investigated. Wide spectral photosensitivity from infra-red to ultraviolet of spectrum area on series of received structures is found out. The physical mechanism of photosensitivity is discussed. The electronic parameters of porous silicon samples under gas adsorption were investigated. It was opend that the ammonia adsorption changes electrical conductivity of porous silicon samples on constant and variable current of measurement. In microporous asymmetrical structures we observed electromotive force on contacts under ammonia adsorption. The physical mechanism of adsorption of ammonia is connected with interaction dipolar molecules ammonia with double electric layer on surface of porous silicon.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306279
Show Author Affiliations
Valentin A. Smyntyna, Odessa State Univ. (Ukraine)
Yurij A. Vashpanov, Odessa State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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