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Proceedings Paper

Effect of impurities on the value of the bulk laser damage threshold of KDP single crystals
Author(s): Vitaly I. Salo; Marina I. Kolybayeva; Viacheslav M. Puzikov; Igor M. Pritula; V. G. Vasil'chuk
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Paper Abstract

The paper is devoted to studying the influence of Cu, Si, Pb and Cr impurities (possessing no absorption bands at the wavelength of acting laser irradiation) on the value of bulk laser damage threshold and UV absorption in KDP single crystals. It is shown that for the investigated concentration range (1(DOT)10-5 - 1(DOT)10-2 mass%) laser damage threshold essentially decreases with raising the concentration of impurity ions in the crystal lattice. The maximal value of the said characteristic (approximately 40 J/cm2) is found to be achieved in the case when the concentration of impurities is not less than 1(DOT)10-5 mass%.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306278
Show Author Affiliations
Vitaly I. Salo, Institute for Single Crystals (Ukraine)
Marina I. Kolybayeva, Institute for Single Crystals (Ukraine)
Viacheslav M. Puzikov, Institute for Single Crystals (Ukraine)
Igor M. Pritula, Institute for Single Crystals (Ukraine)
V. G. Vasil'chuk, Institute for Single Crystals (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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