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Proceedings Paper

Radiation-stable infrared optical components
Author(s): Nicolai D. Savchenko; T. N. Shchurova; A. Kondrat; N. I. Dovgoshej
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Paper Abstract

High-energy electron (E equals 6.5 MeV) irradiation effect ((Phi) equals 1016 cm-2) on the optical transmittance in the wavelength range from 0.4 micrometers to 25 micrometers for Ge, ZnSe, LiF, BaF2, KRS-5, Csl and chalcogenide glasses of IKS-type and on the absorption edge for thin films deposited from Ge-As-Se glasses has been studied. The method of the computer-aided search for the glass compositions with the maximum stability to the high- energy irradiation has been developed. The most stable compositions of the Ge-As-Se system have been found to be the ones closed to As2Se3Ge1 glass, being in the agreement with the experimental results. Experimental verification of the analysis by the testing of the both sides 5.25 micrometers antireflected BaF2 component with two- layer antireflective coating that comprises the high- refractive layer deposited from the selected radiation stable glass Ge16.7As33.3Se50 and the low- refractive layer of ZnS at the specified operating conditions: electron fluence (Phi) equals 4 X 1017 cm-2s-1, has shown the stability of its performances in the operation wavelength region.

Paper Details

Date Published: 20 April 1998
PDF: 7 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306273
Show Author Affiliations
Nicolai D. Savchenko, Uzhgorod State Univ. (Ukraine)
T. N. Shchurova, Uzhgorod State Univ. (Ukraine)
A. Kondrat, Uzhgorod State Univ. (Ukraine)
N. I. Dovgoshej, Uzhgorod State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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